Abstract
The effect of soft X-ray irradiation on the crystallization of a Si1-xGex multilayer was investigated for the realization of low-temperature crystallization. This method is influenced by the Ge concentration and photon flux density by adjusting the photon energy to the optimum value related with the Ge 3d electron orbital. The Ge atom was a trigger for the crystallization because the atomic migration of Ge atoms was enhanced by electron excitation during soft X-ray irradiation. For the Si1-xGex multilayer, the crystallization region can be controlled by varying the Ge concentration. The present crystallization technique can be applied to the fabrication of solar cells with high conversion efficiency.
Published Version
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