Abstract
AbstractEpitaxial Si(1-y)Cy substitutional alloy layers are prepared on monocrystalline silicon substrates by carbon multiple energy ion implantation followed by XeCl excimer laser annealing on large surfaces. Structural analysis of the films before and after laser annealing are made very precisely using spectroscopie ellipsometry (SE), x-ray diffraction (XRD) and Rutherford backscattering (RBS) techniques. We show that annealing energy densities higher than 2J/cm2 result in monocrystalline epitaxial layers with low quantity of defects. The lattice contraction due to the carbon inclusion increases with the implanted C concentration up to about 1.1%. For higher values a more complex behaviour is observed with partial (or total) relaxation of the layer and/or carbide formation‥
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
