Abstract
Morphology of fractal structure in hydrogenated amorphous silicon (a-Si:H) films at different annealing temperatures is observed using transmission electron microscope (TEM). The experimental method is an in situ dynamic observation technique. The fractal dimensions are calculated with the Sandbox method. With the annealing temperature at 450 degree(s)C, the fingering-like fractal structures are grown in the films and the fractal dimension is 1.69. At 800 degree(s)C, the fractal dimension is 1.76. The experimental results show the fractal structures in a-Si:H films. The relationship between the fractal structures in a-Si:H films and its crystallization are discussed.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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