Abstract
We report a new laser crystallization method employing double-layered amorphous-Si ( a-Si) thin films for solid green laser annealing (GLA) crystallization that is called GLA double-layered x'tallization (GLADLAX). Crystallization of the upper and lower a-Si layers of the double-layered substrate at a single laser scanning was achieved, with the upper a-Si becoming poly-Si with very large crystal grains and the lower a-Si layer becoming microcrystalline Si. Thin-film transistors using the upper layer of poly-Si that is crystallized by the method as their active channels had excellent switching performance, with their mobility exceeding 350 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vmiddots, demonstrating promising applicability of GLADLAX to thin-film electronics
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