Abstract
We have converted amorphous Si films into crystalline Si by heating with focused Nd:YAG laser radiation. The films were scanned by a focused laser beam and then studied by reflection electron microscopy and x-ray diffraction. These studies indicate that crystallite sizes as large as 25 μm were produced and suggest that a crystallization technique using a scanned laser beam focused to a slit image could be useful in preparing large-grain Si films for photovoltaic cells.
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