Abstract
The (In 15Sb 85) 100− x Bi x films ( x = 0–18.3) were deposited on nature oxidized Si wafer and glass substrate at room temperature by magnetron co-sputtering of Sb target and InBi composite target. The optical and thermal properties of the films were examined by reflectivity thermal analyzer. Microstructures of the films were analyzed by X-ray diffraction and transmission electron microscope. The crystallization activation energy of the (In 15Sb 85) 100− x Bi x film ( x = 0–18.3) was decreased with increasing Bi content, this indicated that the crystallization speed was improved by doping Bi. The structure of as-deposited (In 15Sb 85) 100− x Bi x films was amorphous and it would transform to Sb, InSb, Bi, and BiIn 2 coexisting phases after annealing at 250 °C for 30 min.
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