Abstract
Crystallization process and the corresponding electrical resistance change were investigated in eutectic Si 15Te 85 amorphous thin films. The Si 15Te 85 amorphous film showed two-stage crystallization process upon heating. In the first stage, the Si 15Te 85 amorphous crystallized into Te crystals at 175 °C. In the second stage, the residual amorphous phase crystallized into Si 2Te 3 crystals at above 300 °C accompanying the resistance drop. Before the second crystallization, the electrical resistance once increased in the temperature range of about 250–295 °C. This phenomenon can be explained by considering the formation of amorphous phase with a high electrical resistivity.
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