Abstract
There were still unclear questions in the new method that fabricate the high quality poly crystalline Si thin film from amorphous Si thin film with lower annealing temperature than conventional Si recrystallization temperature. In that recrystallization process, the recrystallization mechanism was generally explained by the MIC (Metal Induced Crystallization) of Au. In this paper, we have discussed the effects of film structure and strong gravity on recrystallization, by using conventional furnace and high-temperature ultracentrifuge furnace system. The five kinds of samples (two bilayered Si/Au thin films, two multilayered Si/Au thin films and trilayered Si/Au/Si thin film) and found the effects of structure and strong gravity. The best for crystallization was Au/Si multilayered thin film, which is almost finished to crystallize even at 673 K annealing. The strong gravity advanced and retreated the crystallization, depending to thin film structure.
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