Crystallinity of CoSi2 nanolayer grown by refractory metal interlayer and cap layer methods

Abstract

Epitaxial formation of CoSi2 nanolayer by solid state reaction of Co-Si in refractory metal intermediate-layer and cap-layer systems was investigated. Thin films of Ta and W, as the refractory metal intermediate or cap layers of the Co film, were deposited on Si(100) substrate and then heat-treated. The both interlayers resulted in formation of epitaxial CoSi2 with (100) crystallographic orientation at 900°C. However, in the Ta intermediated system, the grown CoSi2 layer was thermally unstable at 1000°C, unlike the W system with a stable silicide layer. We found that use of W cap-layer cannot yield an epitaxial CoSi2 phase. But, a Ta cap-layer resulted in formation of epitaxial CoSi2(100) layer even in a lower temperature (800°C). Again, in the presence of Ta, the grown CoSi2 layer was thermally unstable at 900°C.