Abstract
A new Heusler alloy, Fe2CrSi, which has high spin polarization (P), low saturation magnetization (Ms), and a low Curie temperature (TC), was investigated in order to fabricate high-performance magnetic tunnel junctions (MTJs) with a high tunnel magnetoresistance ratio and with low critical current for the spin-transfer switching method, or a low switching field for the thermally assisted magnetization reversal technique. The main results are as follows: (1) P and the magnetic moment of Fe2CrSi with an L21 structure were 0.98 and 1.98μB∕f.u., respectively, according to density of states calculations. (2) Fe2CrSi films show the (100) orientation with a B2 structure on a MgO substrate upon a thermal treatment with optimum temperature and duration. (3) Fe2CrSi films have Ms and TC values of 385emu∕cm3 and 630K, respectively. (4) The (100) oriented epitaxial MTJs are produced with Fe2CrSi films fabricated with the optimized thermal treatment condition. It is found that the Fe2CrSi Heusler alloy films are a suitable ferromagnetic material for high-performance magnetic random access memory.
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