Abstract
Surface passivation is one of the key factors to the high efficiency solar cells. In this paper negative charge dielectric films (Al2O3)x(TiO2)1-x used as backside surface passivation for crystalline silicon solar cells were prepared by the low-cost sol-gel method. The relation between the passivation properties of the films and the preparation technology was investigated and optimized. The surface passivation characteristic of the alloyed (Al2O3)x(TiO2)1-x thin films are in correlation with sintering temperature. The surface recombination velocity of 1260cm/s of the thin layers can be achieved at sintering temperature 400°C. The alloyed dielectric films also have feasible optical properties which can be acted as backside reflector if combined with metal contact.
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