Abstract
ZnSe/ZnS x Se 1- x strained layer superlattices were grown by atmospheric-pressure metalorganic vapour phase epitaxy (MOVPE) on GaAs substrates. As group VI precursors for ZnS x Se 1- x the combination of diethyl-selenium (DESe) with either diethyl-sulphur (DES) or with H 2S was applied, while we used diethyl-zinc (DEZn) for group II. We investigated the influence of sulphur stabilization during growth interruptions. For the analysis of the structural superlattice properties a combination of Raman spectroscopy and X-ray diffractometry was employed. DES-grown structures with 120 periods, grown at 480°C, show a very good lateral homogeneity of the composition, a high crystal quality and very regular periodicity, which leads in the DCXD profiles to narrow satellite peaks and even pendellösung fringes from the total stack thickness, while in the Raman spectrum the regular modulated structure results in narrow folded acoustical phonon peaks. These results demonstrate the capability of MOVPE to grow high quality ZnSe/ZnS x Se 1- x superlattices.
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