Crystalline defect investigation based on electrons with characteristic energy losses

Abstract

The features inherent to crystal point defect imaging based on electrons with characteristic energy losses are discussed. Variations in the contrast of a Si impurity atom as a function of its depth and the sample thickness, earlier obtained via numerical simulation, are analyzed by analytically solving the issue of multiwave dynamical diffraction along the Ge 〈100〉 direction at E = 300 keV.