Abstract
High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.
Highlights
Two dimensional (2D) semiconductors offer fascinating opportunities in the field of microelectronic and optoelectronic devices due to their novel properties
MoS2 has heavier effective mass of electrons (m∗=0.45m0)4 and low room temperature mobility (200 cm2V–1s–1 of monolayer5), which cannot meet the widespread needs in high mobility devices
Another well-known 2D system is few-layered black phosphorus, which shows a high mobility of 1300 cm2V–1s–1 at low temperature
Summary
Two dimensional (2D) semiconductors offer fascinating opportunities in the field of microelectronic and optoelectronic devices due to their novel properties. MoS2 has heavier effective mass of electrons (m∗=0.45m0) and low room temperature mobility (200 cm2V–1s–1 of monolayer5), which cannot meet the widespread needs in high mobility devices. Another well-known 2D system is few-layered black phosphorus, which shows a high mobility of 1300 cm2V–1s–1 at low temperature.. InSe has a smaller effective electron mass (m∗=0.143m0), quite high electron mobility (2400 cm2V–1s–1) and good stability. It belongs to IIIVI group, consisting of stacking layers in the sequence of SeIn-In-Se along c-axis. The light with the wavelength varying from 400 nm to 990 nm were obtained from photoluminescence spectrum (Jobin-Yvon Fluorolog-3)
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