Crystal growth of SbSI from the vapour phase

Abstract

Large column-like crystals of SbSI were obtained from the vapour phase at a lower temperature of 320°C than previously reported. These columns, around 5×5×25 mm 3 in dimensions, have flat surfaces and no macroscopic defects like hollows. The largest surfaces were the (110) planes. To investigate the growth process, a system controlled by a microcomputer was produced. It enabled one to observe the shape of a growing crystal at regular intervals for a long period; e.g. every two hours for several weeks. The crystal shape proved to be determined at the earliest stage of growth. Almost all the SbSI components in the source materials were found to be transported to the growth zone and to crystallize as SbSI single crystals after 30 days.