Abstract
Semiconducting Mg2Si is known as a thermoelectric material and recently attracts increasing attention as a Si-based, low-cost and environmental friendly material for an infrared (IR) sensor. With the aim of producing cost-effective Mg2Si single crystal substrates for the IR sensor, we have investigated single crystal growth of Mg2Si using the vertical Bridgman (VB) and micro-pulling-down (μ-PD) methods in open-system. Since the evaporation of Mg was not suppressed during the μ-PD, the composition of the Mg2Si single crystal grown by this method was not stoichiometric. On the other hand, single crystalline Mg2Si was produced by the VB method using the Si-treated inner carbon seat and BN-coated carbon crucible. The Mg2Si crystals with a diameter of 30mm were grown at a growth rate of 0.5mm/min and a temperature gradient of 5°C/cm. The electron density and mobility of the crystal so obtained were 1.8×1017cm−3 and 283cm2V−1s−1 at 300K, respectively. The high electron density was due to contamination from the impurities presented in the crucible.
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