Abstract
In this paper we have investigated the crystal growth of indium-doped Czochralski (CZ) silicon for photovoltaic application. It is found that during the CZ silicon crystal growth the evaporation of indium is rather severe, which makes the accurate control of desired resistivity in the crystal difficult. The rapid indium doping after melting raw poly-silicon materials has been proposed to reduce the indium evaporation. The segregation coefficient of indium in silicon has been verified to be 4.0×10-4 by the method of quenching the crystal growth. With an increase of doping concentration, the electrical activity of indium dopants in silicon is found to become smaller. Beyond a critical doping concentration, the cellular growth of indium-doped CZ silicon crystal generally occurs. These results are of interest for the application of indium-doped silicon solar cells without light-induced degradation in photovoltaics.
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