Abstract
A technique for growing single crystals of α-HgS from Hg-rich solutions was developed. The optimal maximum temperature and cooling rate for obtaining large, non-strained single crystals was determined. It was found that Ge, Se, Te, HgSe, HgTe and ZnTe impurities are not able to bring the β-HgS → α-HgS phase transition down to the room temperature.
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