Abstract
Crystalline Cu(In 1− X Ga X ) 3Se 5 ingots were grown by horizontal Bridgman method. Closed quartz ampoules were used to avoid the loss of selenium. Ampoules partially coated with carbon were used to prevent sticking of the melt. The composition variations along as-grown ingots were studied as a function of starting Ga content by Electron Probe Microscope Analysis (EPMA). X-ray powder diffraction (XRD) measurements were carried out to examine the lattice structure and lattice constants. Hall effect measurements were also carried out to determine electrical properties.
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