Abstract
Single crystals of CuGa x In 1− x Se 2 were grown from stoichiometric melt by horizontal Bridgman method. An non-contact carbon coating method was used to avoid sticking between quartz ampoule and the melt. The composition variations along the as-grown ingots were studied as a function of Ga content. X-ray powder diffraction measurements were carried out to determine the lattice constants.
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