Abstract
A modified vapor pressure-controlled Czochralski (VCz) method is reported which employs a diving bell around the growing crystal. Semi-insulating (SI) GaAs crystals with a diameter of 160 mm and an overall length up to 220 mm were grown from melts of up to 23 kg, and compared with similar-sized crystals grown using a standard liquid-encapsulation Czochralski (LEC) process. Optimization of the VCz process was assisted by global numerical simulations. A slightly convex growth interface has been found to be the most suitable one for achieving a relatively low EPD of ∼10 4 cm −2 , with an associated reduction in the probability of dislocation bunching. The carbon concentration of the crystals was controlled down to values of 10 14 cm −3 . The electrical properties, including the EL2° content are discussed.
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