Abstract
Pure semiconducting pyrite phases RuS 2, IrS 3 and mixed pyrite phases Ir 0.667·xRu 1−xS 2 (0<x<1) were prepared in powder form from the elements and characterized by X-ray diffraction and optical reflectivity measurements. Single crystals have been prepared from these powders by chemical vapour transport (CVT) and high temperature solution growth from bismuth fluxes. Ir xRu 1−xS 2 (0.005<x<0.5) crystals (with pyrite structure) were synthetically grown. During this process a sulfur deficiency took place. The incorporation of iridium in the RuS 2 matrix induced a degenerate character of these mixed-phase single crystals (carrier concentration > 10 20 cm −3) as revealed by Hall-measurements.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
