Abstract
TbGa3(BO3)4 crystals were grown using the Bi2Mo3O12: B2O3 : Tb2O3 flux, which decreases contamination of Bi in the resulting crystal. The produced compound crystallizes in the R32 space group with unit cell parameters: a= 9.4512(4) Å, c=7.4532(2) Å. A strong green emission of the luminescence is primarily dominated by the 5D4 to 7F5 transition in Tb3+. Annealing these crystals in a hydrogen atmosphere at 800°C causes a reduction in the luminescence efficiency. On the other hand, annealing in air results in the increment of QY up to the value of 38%.
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