Abstract
The absorption and emission properties of Cr 2+-doped II–VI semiconductors are of considerable current interest for applications in mid-infrared (MIR) solid-state lasers and for passive optical Q-switches. In this paper, the crystal growth and compositional effects on the optical properties of Cr:Cd 1− x Zn x Te ( x=0.05, 0.1, 0.2) and Cr:Cd 1− x Mg x Te ( x=0.15, 0.35) were investigated. Undoped Cd 1− x Zn x Te and Cd 1− x Mg x Te crystals were grown by Bridgman technique. Cr doping of both materials was achieved either in situ during growth or through a thermal diffusion process. For Cr:Cd 1− x Zn x Te, the Cr 2+ absorption properties were strongly dependent on the host composition and spectral blue shifts were observed with increasing Zn content. The Cr 2+ absorption peak shifted from ∼1910 nm for Cr:CdTe to ∼1815 nm for Cr:Cd 0.8Zn 0.2Te. Only small spectral shifts were observed for the MIR emission from Cr:Cd 1− x Zn x Te. On the contrary, the optical properties of Cr 2+ in Cr:Cd 1− x Mg x Te were nearly independent of the host composition and resembled Cr:CdTe.
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