Abstract
We have grown (Ga1-xInx)2O3 mixed crystals by the floating zone technique. The unit cell size of the mixed crystal increases with increasing In content according to Vegards law. For 50 mol% In2O3 we obtained single crystals of a structure different from the regular monoclinic one. Slightly doped (Ga1-xInx)2O3 crystals show n-type semiconduction. With increasing In content, the crystals became p-type semiconductors.
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