Abstract
The cryogenic operation of a low-loss RF switch using a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor is reported. At 77K the channel resistance of the MOSHFET is three times lower and the contact resistance is 20% lower compared to room temperature. As a result, the performance of the MOSHFET RF switch at 77K is even superior to that at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
