Abstract
**Please read the paper on the following link:** https://1worldcontent.com/ess/9106.pdf **Abstract:** In this work, we report the characterization and modeling of a 14 nm bulk FinFET technology from room-temperature down to 4.6 K. A cryogenic device model is used which shows excellent fit to measured data and can accurately predict the performance of the devices at low temperatures. The obtained results show that a tailored cryogenic FinFET technology could achieve a sharp reduction of dissipated power by reducing the drive bias. Such technology has potential for strong impact e.g. in quantum computing, by enabling integration of dense advanced cryogenic ICs inside the cryostat.
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