Abstract
Schottky-Barrier (SB) MOSFETs are fabricated and characterized at room temperature (RT) and 5.4 K. The substrate bias impacts on SB MOSFETs are systematically investigated by measuring the threshold voltage Vth, subthreshold swing SS and transconductance Gm, showing the back gate has almost no effects on these parameters at 5.4 K, in contrast to the results measured at RT. Some oscillations are created in Gm curves by the quantization effect and resonant tunneling at 5.4 K. A large hysteresis is found by enhanced dynamic threshold operation at 72 K due to hot carriers and the presence of a Schottky barrier at the drain.
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