Crosstalk Analysis of Current-Mode Signalling-Coupled RLC Interconnects Using FDTD Technique

Abstract

ABSTRACTIn nanometre regimes, interconnect crosstalk noise has serious implications as it affects the signal integrity of the system. An accurate analysis of crosstalk effects is very essential and a critical issue. This paper efficiently models and analyses the crosstalk effects in current-mode signalling (CMS) multiline-coupled-distributed resistance-inductance-capacitance (RLC) interconnects. The interconnects are driven by complementary metal-oxide-semiconductor (CMOS) gates. The non-linear behaviour of metal-oxide-semiconductor (MOS) transistors in CMOS gate is characterized by an nth power law model. Both inductive and capacitive couplings have been considered to incorporate coupling effects in interconnects. The model is formulated using a finite-difference time-domain (FDTD) technique. The functional and dynamic crosstalk effects have been analysed for different interconnect lengths and varying transition time for the first time in CMS interconnects. The efficacy of CMS interconnects is evaluated by comparison with the conventional voltage-mode signalling (VMS) interconnects. It is analysed that CMS interconnects have lesser crosstalk-induced delay than VMS interconnects. Also, normalized undershoot voltage in CMS interconnects is lesser as compared to VMS signalling interconnects. The results are validated using simulation program with integrated circuit emphasis simulations. The analyses have been carried out for 32 nm technology node.