Abstract
The cross-sectional shape of the stacked silicon nanowires (SiNWs) formed by the Bosch process and stress-limited oxidation is studied in this paper. Under the condition of high temperature oxidation, the resulting nanowires highly resemble the initial shaped resulting by the Bosch process. The effects of etching and passivation in the Bosch process is modeled to provide a guideline to control the cross-section of the stacked nanowires.
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