Abstract
Variation in the temperature dependence of the resistance and magnetic-field dependence of negative magnetoresistance (MR) with increasing gate voltage has been studied on an n-channel poly-Si MOS inversion layer. We find a crossover from strongly-localized (hopping) to weakly-localized (diffusive) regime in two dimensions around the sheet resistance of ≈6 kΩ with increasing gate voltage. In both regimes, the negative MR due to orbital motion is observed and explained by the quantum interference effects.
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