Abstract
Cross sections of (100)Si/(012)sapphire were examined by transmission electron microscopy. The foil plane was (011)Si and contained the [1̄00]Si growth direction. The number of faults (i.e., microtwins and isolated stacking faults) per cm measured in the [022]Si direction, FD, decreases with increasing distance d from the silicon/substrate growth interface according to the equations FD= (3.1×107)/d0.63 (440⩽d⩽2400 Å), and FD= (1.3×1011)/d1.7 (2400?d?4.3×104 Å). Misfit dislocations were not observed, and no evidence for the presence of an Al-bearing phase was seen in the proximity of the interface.
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