Abstract
In this work, cross-sectional ballistic electron emission microscopy is introduced to determine a Schottky barrier height profile of a GaAs–AlGaAs multiheterostructure in cross-sectional geometry. Ballistic electron spectra measured across the heterostructure with nanometer resolution indicate that the measured Schottky barrier height profile is smeared out compared to the conduction band profile calculated from the sample growth parameters. We attribute this behavior to lateral band bending effects along the heterojunction. In addition, we have evidence that the barrier height profile is influenced by single impurities in the AlGaAs layers.
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