Abstract
The surface work function measurement of doped silicon structures by using an adapted commercially available SFM (scanning force microscope) is presented. The investigation of a well defined ion-implanted sample for testing the measurement method is described. Deviations of the measured work function values from the theoretical expectations are discussed and interpreted. Furthermore the cross-sectional measurement of a microcrystalline silicon p–i–n diode structure for photovoltaic applications is presented. Contrast can be achieved due to different dopants and the built-in electric drift field between p- and n-doped regions. The potential to judge the quality of diode structures and to suggest improvements for the deposition process is stated.
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