Abstract
This work presents a study of the cross-section features (such as shape and dimensions) impact on surrounding multiple-gate FETs (MuGFETs) performance. Bearing this objective in mind, the results discussion was based on the analysis of very important parameters, such as the subthreshold slope and the threshold voltage, as a function of the transistors physical characteristics for different cross-section shapes. Considering, at first, surrounding devices with the same silicon thickness, the best results were obtained by the circular channel cross-section, when compared to square and octagonal ones. On the other hand, this work highlighted the impact of the dimensions in this cross-section shape comparison. Focusing on circular and square-shaped devices, it was observed that the latest one may present better short channel effects, depending on the cross-section area. In other words, the geometric optimization in terms of channel current control must take into account different cross-section features, such as the area and the cross-section shapes.
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