Abstract
Magnetic field effects on the hysteretic I–V curve caused by low-temperature impurity avalanche breakdown at 4.2 K have been investigated in high-purity n-GaAs. Main results for the transverse magnetic fields are shifts of the hysteresis towards higher breakdown voltages due to transverse magnetoresistance effect. Under the longitudinal magnetic fields, the holding voltage of the hysteresis moves towards higher voltages, while the breakdown voltage does not show any significant shifts. With B ⪆ 47 mT, the holding voltage exceeds the breakdown voltage, and eventually the cross-over current instability and chaos have been observed.
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