Abstract
This paper reports the comparison among the results obtained by various types of testing for evaluating fatigue lifetime of silicon specimens, performed in 6 institutions in Japan. The experiment covers a variety of single crystal silicon (SCS) specimens fabricated on the same SOI wafers with 5 µm device layer thickness as well as additional specimens made separately in some institutions. In summary, although their initial strength under monotonically increasing load was reported ranging from 2 GPa to 8 GPa depending on the designs, fatigue lifetime was observed with a unique trend which can be well formulated on the basis of Paris' law to describe equivalent fatigue crack extension process.
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