Critical oxide cluster size on Si(111)

Abstract

The initial stage of oxide growth and subsequent oxide decomposition on Si(111)-7×7 at temperatures between 350 and 720°C are studied with the optical second harmonic generation for O2 pressures (Pox) between 5×10−9 and 4×10−6Torr. The obtained pressure dependencies of the initial oxide growth rate (Rgr) and the subsequent oxide decomposition rate are associated with the cluster-forming nature of the oxidation process. For the model of oxide cluster nucleation and growth, a scaling relationship is derived among the critical oxide cluster size, i, and the experimentally measurable values of Rgr and Pox. The critical oxide cluster size, i, thus obtained from the kinetic data increases with temperature. This correlates with an increase of desorption channels and their rates in that the competition between growth and decomposition requires more stable oxide clusters, i.e. clusters with a larger critical size, for oxide to grow at higher temperatures. The increase of i with decreasing Pox is related with a decrease of Rgr: a decreased Rgr requires critical clusters with a longer lifetime, i.e. clusters with a larger size.