Abstract
The transition between planar and nonplanar growth is examined for compressively strained In0.27Ga0.73As∕GaAs(001) films using reflection high energy electron diffraction, atomic force microscopy, and scanning tunneling microscopy (STM). For a narrow range of temperature and composition, the critical thickness (tSK) is strongly dependent on As flux. For high values of As flux, tSK increases by more than a factor of 2. The morphology of three-dimensional islands formed during the initial stages of nonplanar growth is also characterized by high resolution STM.
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