Abstract
Chemically amplified resists depend upon the post-exposure bake (PEB) process to drive the deprotection reactions (in positive resists) that lead to proper resist development. For this reason they often exhibit critical dimension (CD) sensitivity to PEB temperature variation. In this work the effects of variation in different aspects of the PEB step on post-develop CD are studied for two extreme ultraviolet (EUV) photoresists. The spatial and temporal temperature uniformity of the PEB plate is measured using a wireless sensor wafer. Programmed variations in the bake plate temperature set point are then used to measure the CD sensitivity to steady state temperature variation. In addition, the initial temperature ramp time is modified using a thin sheet of polyimide film between the wafer and the bake plate. This allows for measurement of the CD sensitivity to transient temperature variation. Finally, the bake time is adjusted to measure the CD sensitivity to this parameter.© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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