Critical bending radius and electrical behaviors of organic field effect transistors under elastoplastic bending strain

Abstract

Critical bending radii of some organic thin films were predicted using nanoindentation data and a prediction equation. Electrical behaviors of elastically bent organic field effect transistor(OFET) were also calculated assuming that dimensional changes in the films give rise to electrical changes. The predicted critical bending radius of a pentacene film (4.42 mm) agreed well with the experimental radius from the literature (4.6 mm) within a difference of 4%. The relative source-drain current behaviors predicted for pentacene OFETs using a conventional prediction equation are quite different from the experimental behaviors reported in the literature.