Abstract
In this work, we performed quantitative measurements of strain in structures consisting of a 30 nm-thick Si1-yCy layer grown by chemical vapour deposition (CVD) on a Si (001) substrate. Total C concentrations vary from 0.67 to 2%. Geometric phase analysis (GPA) of high-resolution transmission electron microscopy (HR TEM) cross-section images and convergent-beam electron diffraction (CBED) with a nanometer resolution as well as Raman spectroscopy and high-resolution X-ray diffraction with a micro- and millimeter resolutions, respectively, were used to deduce the strain within these Si1-yCy layers. These results were compared with the predictions of elasticity theory. Particular interest is paid to the formation of the structural defects within Si1-yCy layers as a function of C concentration, growth temperature and incorporated strain.
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