Abstract
The feasibility of extracting quantitative information from spectroscopic ellipsometry (SE) experimental data is dependent on a number of factors. These include the issue of optical model sophistication and ellipsometric sensitivity to structural parameters. One area of increasing interest is the application of SE to the analysis of separation by implanted oxygen (SIMOX) substrates. For SIMOX layer thickness determination it has been demonstrated that a three-layer optical model is adequate to represent the SIMOX substrate. This paper will highlight critical constraints imposed by correlation between parameters in multi-parameter fitting of SIMOX spectral data. In the context of defect quantification a calculation of the theoretical sensitivity of the measured ellipsometric angles, ψ and Δ, to residual crystalline damage, via an effective-medium approximation, in the superficial silicon layer is presented and discussed.
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