Abstract
We have studied the creep of nickel and copper in a submicrocrystalline (SMC) state in a vacuum and in the presence of a diffusion contact with an impurity (Cu and Al, respectively). It is shown that a reduction of the resistance in the presence of a diffusion contact with an impurity is observed in the SMC materials in the temperature range 398 to 473 K. This range is 200 to 400 K lower than the corresponding range for coarse-grained material. It is shown that in this temperature interval the coefficients of grain boundary diffusion for copper in SMC nickel are 5 to 6 orders of magnitude larger than in the coarse-grained material. We propose that the reduction in the temperature for the manifestation of a creep activation effect in the presence of a diffusion contact with an impurity in SMC materials is caused by the increase in the diffusion permeability of the submicrocrystalline grain boundaries.
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