Abstract
We present an approach for the creation of guiding patterns to direct the self-assembly of block copolymers. A neutral layer of a brush polymer is directly exposed by electrons, causing the cross-linking of the brush molecules, and thus changing its local affinity. The advantage relies on the achievable resolution and the reduction of the process steps in comparison with deep UV and conventional electron beam lithography, since it avoids the use of a resist. We envision that this method will be highly valuable for the investigation of high-chi directed self-assembly materials and complex guiding pattern designs, where pattern placement and resolution are becoming critical.
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