Abstract

We present a novel method for creating damage-free ferroelectric nanostructureswith a focused ion beam milling machine. Using a standard e-beam photoresistfollowed by a dilute acid wash, nanostructures ranging in size from1 µm down to 250 nm were created in a 90 nm thick lead zirconate titanate (PZT) wafer.Transmission electron microscopy and piezoresponse force microscopy (PFM)confirmed that the surfaces of the nanostructures remained damage free duringfabrication, and showed no gallium implantation, and that there was no degradation offerroelectric properties. In fact DC strain loops, obtained using PFM, demonstratedthat the nanostructures have a higher piezoresponse than unmilled films. As thesamples did not have any top hard mask, the method presented is unique as itallows for imaging of the top surface to understand edge effects in well-definednanostructures. In addition, as no post-mill annealing was necessary, it facilitatesinvestigation of nanoscale domain mechanisms without process-induced artefacts.

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