Abstract
This work reports a novel SOI MESFET including silicon N-type and P-type wells inside the drift and buried oxide regions. The drift-diffusion equations along with the main physical models such as impact ionization, Shockley-Read-Hall and self-heating effect are carefully solved inside the structures. Modification of the potential profile occurs in the channel region and results in decrease in peak electric field. Output power density is successfully boosted owing to improved driving current and breakdown voltage, simultaneously. In addition, self-heating effect is alleviated in the proposed structure due to decreased effective thermal resistance of the channel region. Comprehensive DC and AC performance comparisons show that the proposed device promises a more reliable candidate than the conventional SOI structure for high voltage applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
