Abstract
Cracks occur more easily in the silicon dioxide (SiO2)-phosphosilicate glass (PSG)-silicon nitride (Si3N4) composite layer on silicon substrates than in the SiO2–Si3N4 composite layer. The Si3N4 limit thickness with respect to crack occurrence in the SiO2–PSG–Si3N4 composite layer decreases with increasing PSG film thickness within the range of 0–1500 Å, with increasing P2O5 concentration in PSG film within the range of 0–10 mol% and with increasing Si3N4 deposition temperature. The local reaction of Si3N4 with P2O5 is probably the reason for crack occurrence in the SiO2–PSG–Si3N4 composite layer.
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