Abstract
AbstractThis special issue of physica status solidi (b) on silicon carbide (SiC) was guest‐edited by Lothar Ley and Gerhard Pensl, University of Erlangen‐Nürnberg, Germany. It contains 17 articles and an Expert Opinion providing detailed information regarding our current understanding of many material and physical aspects of silicon carbide (SiC) as an emerging semiconductor material for electronic and electrical devices. The information contained in this volume gives a comprehensive overview of important topics ranging from crystal growth and defects characterization to technological applications. The cover picture is aimed at reflecting the many facets of SiC research. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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