Abstract
Scanning electron microscopy image of a 6H‐SiC (0001) pillar with an average diameter of ~1.2 micrometers prepared via focused ion beam milling of a bulk 6H‐SiC single crystal. This sample was prepared and imaged using the facilities at the National Center for Electron Microscopy in the Lawrence Berkeley National Laboratory, Berkeley, CA. See this month‘s feature article by Kiani et al. image
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